Introduction and application of  CAS No. 22398-80-7 | INDIUM PHOSPHIDE

Synonyms:InP;INDIUM(III)PHOSPHIDE;

Phosphinetriylindium(III);

Indiumphosphide/99.999%;

ChemicalbookIndiumphosphide(99.999%-In)PURATREM;

Indiumphosphidewafer;

Indiumphosphidemetalsbasispiecesanddownblack

Specification:

Chemical properties:

Indium phosphide has dark gray crystals with a pitchy luster. Melting point 1070℃. The dissociation pressure under the melting point is 2.75Mpa. Very slightly soluble in inorganic acids. Dielectric constant: 10.8. Electron mobility: about 4600cm2/V?s. Hole mobility: about 150cm2/V?s. Has semiconductor properties.

Usage: Used as semiconductor material and used in optical fiber communication technology, which requires light sources and receivers in the range of 1.1~1.6μm. Growing In-GaAsP double heterojunction lasers on InP substrates can meet both lattice matching and wavelength range requirements.

production method:

The most important method is to prepare indium phosphide single crystal using a high-pressure single crystal furnace, and the dislocation density of the crystal is reduced by doping electronic impurities. In vapor phase epitaxy, the disproportionation method of the In-PCl3-H2 system is mostly used. In this process, the reaction between indium (99.9999%) and phosphorus trichloride (99.999%) is used to grow the indium phosphide layer. In vapor phase epitaxy, the quartz reaction tube is placed in a dual-temperature zone electric furnace, and purified high-purity hydrogen is metered in. The hydrogen is also used to dilute phosphorus trichloride. At this time, the bubbler is kept at 0°C, and the hydrogen in the reaction tube is passed through. The linear speed is 14cm/min. Epitaxial growth is divided into several stages. In the first stage, a quartz boat containing indium is placed in the middle source area of the electric furnace, hydrogen gas is introduced and heated to 700-850°C, and phosphorus trichloride is introduced with hydrogen gas, and is reduced to phosphorus vapor and phosphorus vapor above the indium source. Hydrogen chloride. Hydrogen cadmium reacts with indium to generate indium chloride vapor that migrates in the tube. Phosphorus is dissolved in indium until saturated. In the second stage, the indium source remains in its original position without heating, and the single crystal substrate is placed in the second heating zone of the electric furnace and heated to 600 to 750°C in a hydrogen atmosphere. First, hydrogen gas is used to introduce phosphorus trichloride into the tube to perform vapor phase corrosion on the substrate and clean the substrate surface. Hydrogen is then introduced directly into the reaction tube and the source is heated to its supersaturation temperature (which is 100°C higher than the temperature of the substrate crystal during operation). Phosphorus trichloride is then introduced by bubbling hydrogen. At this time, the phosphorus vapor reacts with the indium chloride generated in the source region, and an indium phosphide layer is deposited and grown on the substrate. When the epitaxial growth is completed, pure hydrogen is introduced into the system, the two temperature zones are cooled to room temperature, and the product is taken out to obtain the finished indium phosphide product.

Package and transportation :

Package: 10g,25g,50g,100g,250g

Transportation: by courier/ by air/ by sea